型号:

NSS1C201MZ4T1G

RoHS:无铅 / 符合
制造商:ON Semiconductor描述:TRANS NPN 100V 2A SOT223-4
详细参数
数值
产品分类 分离式半导体产品 >> 晶体管(BJT) - 单路
NSS1C201MZ4T1G PDF
产品变化通告 Wire Bond Change 01/Dec/2010
标准包装 1,000
系列 -
晶体管类型 NPN
电流 - 集电极 (Ic)(最大) 2A
电压 - 集电极发射极击穿(最大) 100V
Ib、Ic条件下的Vce饱和度(最大) 180mV @ 200mA,2A
电流 - 集电极截止(最大) -
在某 Ic、Vce 时的最小直流电流增益 (hFE) 120 @ 500mA,2V
功率 - 最大 800mW
频率 - 转换 100MHz
安装类型 表面贴装
封装/外壳 TO-261-4,TO-261AA
供应商设备封装 SOT-223
包装 带卷 (TR)
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